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Power Mosfet IPB083N10N3 G TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB083N10N3GATMA1
    Other # IPB083N10N3 G
    Mfr. Infineon
    Oneyac # A-IPB083N10N3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) (maximum) at different Vds 3980pF @ 50V
    Gate charge at different VGS (QG) (maximum) 55nC @ 10V
    fet type n channel
    Power dissipation (maximum) 125W(Tc)
    Drain-Source Voltage (Vdss) 100V
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 8.3 milliohm @ 73a, 10V
    Operating temperature -55°C ~ 175°C(TJ)
    Vgs(Max) ±20V
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Vgs(th) (maximum) when different Id 3.5V @ 75uA
    Current at 25°C-Continuous Drain (Id) 80A(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
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