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Power MOSFET D²PAK(TO-263AB)

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    MPN IRFS4410TRLPBF
    Mfr. Infineon
    Oneyac # A-IRFS4410TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single HexFet 100 V 200 W 180 nC Silicon Surface Mount Mosfet - TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 180nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 5150pF @ 50V
    Pd power dissipation (Max) 200W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 180nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5150pF @ 50V
    Rds On(Max)@Id,Vgs 10mΩ@58A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 96A
    Package/Enclosure D²PAK(TO-263AB)
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