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Power Mosfet IPB100N04S2-04 TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB100N04S204ATMA4
    Other # IPB100N04S2-04
    Mfr. Infineon
    Oneyac # A-IPB100N04S204ATMA4
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Current at 25°C-Continuous Drain (Id) 100A(Tc)
    Vgs(th) (maximum) when different Id 4V @ 250uA
    fet type n channel
    Power dissipation (maximum) 300W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 5300pF @ 25V
    On resistance at different Id and Vgs (maximum) 3.3 milliohm @ 80A, 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Vgs(Max) ±20V
    Operating temperature -55°C ~ 175°C(TJ)
    technology MOSFET (metal oxide)
    Gate charge at different VGS (QG) (maximum) 172nC @ 10V
    Drain-Source Voltage (Vdss) 40V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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