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Power Mosfet IPB057N06N TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB057N06NATMA1
    Other # IPB057N06N
    Mfr. Infineon
    Oneyac # A-IPB057N06NATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Power dissipation (maximum) 3W(Ta),83W(Tc)
    Drain-Source Voltage (Vdss) 60V
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 5.7 milliohm @ 45A, 10V
    technology MOSFET (metal oxide)
    Current at 25°C-Continuous Drain (Id) 17A(Ta),45A(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 2000pF @ 30V
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Operating temperature -55°C ~ 175°C(TJ)
    Vgs(th) (maximum) when different Id 2.8V @ 36uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    fet type n channel
    Gate charge at different VGS (QG) (maximum) 27nC @ 10V
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