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Power Mosfet IPB100N04S4-H2 TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB100N04S4H2ATMA1
    Other # IPB100N04S4-H2
    Mfr. Infineon
    Oneyac # A-IPB100N04S4H2ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    fet type n channel
    Current at 25°C-Continuous Drain (Id) 100A(Tc)
    technology MOSFET (metal oxide)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Power dissipation (maximum) 115W(Tc)
    Drain-Source Voltage (Vdss) 40V
    Operating temperature -55°C ~ 175°C(TJ)
    On resistance at different Id and Vgs (maximum) 2.4 milliohm @ 100A, 10V
    Gate charge at different VGS (QG) (maximum) 90nC @ 10V
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4V @ 70uA
    Input capacitance (Ciss) (maximum) at different Vds 7180pF @ 25V
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