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Power Mosfet IPB100N04S2L-03 TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB100N04S2L03ATMA2
    Other # IPB100N04S2L-03
    Mfr. Infineon
    Oneyac # A-IPB100N04S2L03ATMA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -55°C ~ 175°C(TJ)
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Vgs(Max) ±20V
    Power dissipation (maximum) 300W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 6000pF @ 25V
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Vgs(th) (maximum) when different Id 2V @ 250uA
    fet type n channel
    Drain-Source Voltage (Vdss) 40V
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 3 milliohm @ 80A, 10V
    Gate charge at different VGS (QG) (maximum) 230nC @ 10V
    Current at 25°C-Continuous Drain (Id) 100A(Tc)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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