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Power Mosfet IPB090N06N3 G TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB090N06N3GATMA1
    Other # IPB090N06N3 G
    Mfr. Infineon
    Oneyac # A-IPB090N06N3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 36nC @ 10V
    Input capacitance (Ciss) (maximum) at different Vds 2900pF @ 30V
    Operating temperature -55°C ~ 175°C(TJ)
    Vgs(th) (maximum) when different Id 4V @ 34uA
    Current at 25°C-Continuous Drain (Id) 50A(Tc)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    fet type n channel
    Drain-Source Voltage (Vdss) 60V
    Power dissipation (maximum) 71W(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    On resistance at different Id and Vgs (maximum) 9 milliohms @ 50A, 10V
    Vgs(Max) ±20V
    technology MOSFET (metal oxide)
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