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Power Mosfet IPB100N06S2-05 TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB100N06S205ATMA4
    Other # IPB100N06S2-05
    Mfr. Infineon
    Oneyac # A-IPB100N06S205ATMA4
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Current at 25°C-Continuous Drain (Id) 100A(Tc)
    Gate charge at different VGS (QG) (maximum) 170nC @ 10V
    technology MOSFET (metal oxide)
    fet type n channel
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Power dissipation (maximum) 300W(Tc)
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4V @ 250uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Input capacitance (Ciss) (maximum) at different Vds 5110pF @ 25V
    On resistance at different Id and Vgs (maximum) 4.7 milliohm @ 80A, 10V
    Drain-Source Voltage (Vdss) 55V
    Operating temperature -55°C ~ 175°C(TJ)
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