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Power MOSFET SOT-23

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    MPN SI2399DS-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI2399DS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SI
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,10V
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 20nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 835pF @ 10V
    Gate voltage Vgs ±12V
    Pd power dissipation (Max) 1.25W(Ta),2.5W(Tc)
    Rds On(Max)@Id,Vgs 34mΩ@5.1A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23
    FET type P-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 5.1A
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