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Power Mosfet SOIC-8

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    MPN SI4056DY-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI4056DY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) (maximum) at different Ids 2.8V @ 250µA
    Continuous Drain Current Id 11.1A
    Gate voltage Vgs ±20V
    Series SI
    Input capacitance (Ciss) at different Vds (maximum) 900pF @ 50V
    Package/Enclosure SOIC-8
    Rds On(Max)@Id,Vgs 23mΩ
    fet type N-Channel
    Gate Charge (Qg) at Different Vgs (Maximum) 29.5nC @ 10V
    Pd-power dissipation (Max) 2.5W(Ta),5.7W(Tc)
    Drain-source voltage Vds 2.8V
    Operating temperature -55°C~150°C(TJ)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  0 Lead Time:34W

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    MPQ 2,500 ETD HK Contact Us
    Min. 1 Mult. 1

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