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Power MOSFET SOT-23-3

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    MPN SI2304DDS-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI2304DDS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Part number alias SI2304DDS-GE3
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 6.7nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 235pF @ 15V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    Continuous drain current Id 3.6A
    Pd power dissipation (Max) 1.7W
    QG gate charge 6.7nC
    Rds On(Max)@Id,Vgs 60mΩ
    Drain source voltage Vds 30V
    Gate voltage Vgs 1.2V
    rise time 12ns
    Descent time 5ns
    Typical shutdown delay time 10ns
    Typical connection delay time 5ns
    Forward transconductance - minimum value 11S
    Series SI2
    Number of channels 1Channel
    to configure Single
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