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Power MOSFET SOT-23-3

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    MPN SI2333DDS-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI2333DDS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SI
    Drive voltage @ Rds On (Max), Rds On (Min) 1.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 35nC @ 8V
    Input capacitance (Ciss) at different Vds (maximum value) 1275pF @ 6V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 1.2W(Ta),1.7W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    FET type P-Channel
    Drain source voltage Vds -12V
    Continuous drain current Id -6A
    Rds On(Max)@Id,Vgs 28mΩ@5A,4.5V
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    In Stock :  50 Lead Time:10W

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