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Power MOSFET SOT-23-3

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    MPN SI2307CDS-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI2307CDS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SI
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 6.2nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 340pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 1.1W(Ta),1.8W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 2.7A
    Rds On(Max)@Id,Vgs 880mΩ
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    In Stock :  160 Lead Time:10W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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