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Power MOSFET SOT-23-3

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    MPN SI2305CDS-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI2305CDS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 30nC @ 8V
    Input capacitance (Ciss) at different Vds (maximum value) 960pF @ 4V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    Continuous drain current Id 5.8A
    Pd power dissipation (Max) 1.7W
    QG gate charge 30nC
    Rds On(Max)@Id,Vgs 35mΩ
    Drain source voltage Vds 8V
    Gate voltage Vgs 400mV
    rise time 20ns
    Descent time 10ns
    Typical shutdown delay time 40ns
    Typical connection delay time 20ns
    width 1.60mm
    Forward transconductance - minimum value 17S
    Series SI2
    Number of channels 1Channel
    to configure Single
    length 2.9mm
    height 1.45mm
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    In Stock :  178 Lead Time:10W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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