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Power MOSFET SOT-23

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    MPN NTR2101PT1G
    Mfr. ON Semiconductor
    Oneyac # A-NTR2101PT1G-1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 1173pF @ 4V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 960mW(Ta)
    Rds On(Max)@Id,Vgs 52m Ohms@3.5A,4.5V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23
    FET type P-Channel
    Drain source voltage Vds 8V
    Continuous drain current Id 3.7A
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