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Power MOSFET IPA80R460CE TO-220-3 whole package

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    MPN IPA80R460CEXKSA2
    Other # IPA80R460CE
    Mfr. Infineon
    Oneyac # A-IPA80R460CEXKSA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package Operating temperature : -40°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Gate charge at different VGS (QG) (maximum) 64nC @ 10V
    Package/Enclosure TO-220-3 whole package
    Power dissipation (maximum) 34W(Tc)
    Drain-Source Voltage (Vdss) 800V
    technology MOSFET (metal oxide)
    fet type n channel
    Current at 25°C-Continuous Drain (Id) 10.8A(Ta)
    Vgs(th) (maximum) when different Id 3.9V @ 680uA
    Vgs(Max) ±20V
    Operating temperature -40°C ~ 150°C(TJ)
    On resistance at different Id and Vgs (maximum) 460 milliohm @ 7.1A, 10V
    Input capacitance (Ciss) (maximum) at different Vds 1600pF @ 100V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
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