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Power MOSFET TO-220-3

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    MPN R6009ENX
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-R6009ENX
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 600V
    Continuous drain current Id 9A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 23nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 430pF @ 25V
    Pd power dissipation (Max) 40W(Tc)
    Rds On(Max)@Id,Vgs 535mΩ@2.8A,10V
    working temperature 150°C(TJ)
    Package/Enclosure TO-220-3
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

    Q : Can I return it?

    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

    In Stock :  55

    Qty. Unit Price Ext. Price
    30+ $0.7619 $22.857
    50+ $0.7474 $37.37

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Year: 2014

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