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Power MOSFET TO-220-3

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    MPN R6009ENX
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-R6009ENX
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 600V
    Continuous drain current Id 9A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 23nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 430pF @ 25V
    Pd power dissipation (Max) 40W(Tc)
    Rds On(Max)@Id,Vgs 535mΩ@2.8A,10V
    working temperature 150°C(TJ)
    Package/Enclosure TO-220-3
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    In Stock :  100

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 500 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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