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Power Mosfet IPA80R1K0CE TO-220-3 whole package

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    MPN IPA80R1K0CEXKSA2
    Other # IPA80R1K0CE
    Mfr. Infineon
    Oneyac # A-IPA80R1K0CEXKSA2
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    fet type n channel
    Package/Enclosure TO-220-3 whole package
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 950 milliohm @ 3.6a, 10V
    Power dissipation (maximum) 32W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 785pF @ 100V
    Gate charge at different VGS (QG) (maximum) 31nC @ 10V
    Drain-Source Voltage (Vdss) 800V
    Current at 25°C-Continuous Drain (Id) 5.7A(Tc)
    technology MOSFET (metal oxide)
    Operating temperature -40°C ~ 150°C(TJ)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Vgs(th) (maximum) when different Id 3.9V @ 250uA
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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