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Power MOSFET IPA80R650CE TO-220-3 whole package

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    MPN IPA80R650CEXKSA2
    Other # IPA80R650CE
    Mfr. Infineon
    Oneyac # A-IPA80R650CEXKSA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package Operating temperature : -40°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs(th) (maximum) when different Id 3.9V @ 470uA
    Gate charge at different VGS (QG) (maximum) 45nC @ 10V
    On resistance at different Id and Vgs (maximum) 650 milliohm @ 5.1a, 10V
    Drain-Source Voltage (Vdss) 800V
    Package/Enclosure TO-220-3 whole package
    Operating temperature -40°C ~ 150°C(TJ)
    fet type n channel
    Input capacitance (Ciss) (maximum) at different Vds 1100pF @ 100V
    technology MOSFET (metal oxide)
    Current at 25°C-Continuous Drain (Id) 8A(Ta)
    Vgs(Max) ±20V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Power dissipation (maximum) 33W(Tc)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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