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Power MOSFET IPA80R650CE TO-220-3 full package

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    MPN IPA80R650CEXKSA2
    Other # IPA80R650CE
    Mfr. Infineon
    Oneyac # A-IPA80R650CEXKSA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 full package

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 8A(Ta)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 650 milliohms @ 5.1A, 10V
    Vgs (th) (maximum value) for different IDs 3.9V @ 470uA
    Input capacitance (Ciss) at different Vds (maximum value) 1100pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 45nC @ 10V
    Power dissipation (maximum value) 33W(Tc)
    Package/Enclosure TO-220-3 full package
    working temperature -40°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 800V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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