Datasheet |
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Description | Details | Operation |
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Product Category | Power Mosfet | |
Power dissipation (maximum) | 31W(Tc) | |
Drive voltage (Max RdsOn, Minimum RdsOn) | 10V | |
On resistance at different Id and Vgs (maximum) | 1.4 ohms @ 2.3A, 10V | |
Gate charge at different VGS (QG) (maximum) | 23nC @ 10V | |
Vgs(th) (maximum) when different Id | 3.9V @ 240uA | |
Package/Enclosure | TO-220-3 whole package | |
fet type | n channel | |
Operating temperature | -40°C ~ 150°C(TJ) | |
Current at 25°C-Continuous Drain (Id) | 3.9A(Tc) | |
Input capacitance (Ciss) (maximum) at different Vds | 570pF @ 100V | |
technology | MOSFET (metal oxide) | |
Drain-Source Voltage (Vdss) | 800V | |
Vgs(Max) | ±20V |
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A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.
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Qty. | Unit Price | Ext. Price |
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1+ : Inquiry |
MPQ | 50 | ETD HK | Contact Us |
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Min. | 1 | Mult. | 1 |
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