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Power MOSFET Micro6™(TSOP-6)

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    MPN IRLMS1503TRPBF
    Mfr. Infineon
    Oneyac # A-IRLMS1503TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 0.2 Ohm 9.6 nC 1.7 W Generation V SMT Mosfet - MICRO-6

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 9.6nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 210pF @ 25V
    Pd power dissipation (Max) 1.7W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 9.6nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 210pF @ 25V
    Rds On(Max)@Id,Vgs 100mΩ@2.2A,10V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 3.2A
    Package/Enclosure Micro6™(TSOP-6)
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