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Power MOSFET SOT-23-6,TSOT-23-6

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    MPN RTQ020N03TR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RTQ020N03TR
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-6,TSOT-23-6

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Gate charge (Qg) at different Vgs (maximum value) 3.3nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 135pF @ 10V
    Gate voltage Vgs 12V
    Pd power dissipation (Max) 1.25W(Ta)
    Rds On(Max)@Id,Vgs 125mΩ@2A,4.5V
    working temperature 150°C(TJ)
    Package/Enclosure SOT-23-6,TSOT-23-6
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 2A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.5V @ 1mA
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    In Stock :  100

    Qty. Unit Price Ext. Price
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