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Power MOSFET Micro6™(SOT23-6)

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    MPN IRLMS2002TRPBF
    Mfr. Infineon
    Oneyac # A-IRLMS2002TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 20 V 2 W 15 nC Hexfet Power Mosfet Surface Mount - MICRO-6

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 22nC @ 5V
    Gate voltage Vgs ±12V
    Input capacitance (Ciss) at different Vds (maximum value) 1310pF @ 15V
    Pd power dissipation (Max) 2W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 22nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 1310pF @ 15V
    Rds On(Max)@Id,Vgs 30mΩ@6.5A,4.5V
    FET type N-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 6.5A
    Package/Enclosure Micro6™(SOT23-6)
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