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Power MOSFET Micro3™/SOT-23

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    MPN IRLML2803TRPBF
    Mfr. Infineon
    Oneyac # A-IRLML2803TRPBF
    Supplier Oneyac
    Unleaded/RoHs Lead Free/Rohs
    Description
    Single N-Channel 30 V 540 W 3.3 nC Hexfet Power Mosfet Surface Mount - MICRO-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 85pF @ 25V
    Pd power dissipation (Max) 540mW(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 85pF @ 25V
    Rds On(Max)@Id,Vgs 250mΩ@910mA,10V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 1.2A
    Package/Enclosure Micro3™/SOT-23
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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