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Small signal MOSFET Micro3™/SOT-23

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    MPN IRLML5103TRPBF
    Mfr. Infineon
    Oneyac # A-IRLML5103TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 30 V 1 Ohm 5.1 nC 540 W Generation V SMT Mosfet - SOT-23

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5.1nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 75pF @ 25V
    Pd power dissipation (Max) 540mW(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5.1nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 75pF @ 25V
    Rds On(Max)@Id,Vgs 600mΩ@600mA,10V
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 0.76A
    Package/Enclosure Micro3™/SOT-23
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