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Power MOSFET Micro3™/SOT-23

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    MPN IRLML6346TRPBF
    Mfr. Infineon
    Oneyac # A-IRLML6346TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 30 V 80 mOhm 2.9 nC 1.3 W Silicon SMT Mosfet - SOT-23

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 2.9nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
    Gate voltage Vgs ±12V
    Input capacitance (Ciss) at different Vds (maximum value) 270pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 24V
    Pd power dissipation (Max) 1.3W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.1V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 2.9nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 270pF @ 24V
    Rds On(Max)@Id,Vgs 63mΩ@3.4A,4.5V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 3.4A
    Package/Enclosure Micro3™/SOT-23
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