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Power Mosfet IPD60R600E6 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD60R600E6ATMA1
    Other # IPD60R600E6
    Mfr. Infineon
    Oneyac # A-IPD60R600E6ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drain-Source Voltage (Vdss) 600V
    Vgs(Max) ±20V
    Power dissipation (maximum) 63W(Tc)
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    On resistance at different Id and Vgs (maximum) 600 milliohm @ 2.4a, 10V
    Vgs(th) (maximum) when different Id 3.5V @ 200uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Gate charge at different VGS (QG) (maximum) 20.5nC @ 10V
    Current at 25°C-Continuous Drain (Id) 7.3A(Tc)
    fet type n channel
    Input capacitance (Ciss) (maximum) at different Vds 440pF @ 100V
    technology MOSFET (metal oxide)
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