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Power MOSFET IPD60R600P7S TO-252-3, DPak (2 leads+tab), SC-63

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    MPN IPD60R600P7SAUMA1
    Other # IPD60R600P7S
    Mfr. Infineon
    Oneyac # A-IPD60R600P7SAUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 6A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 600 milliohms @ 1.7A, 10V
    Vgs (th) (maximum value) for different IDs 4V @ 80uA
    Input capacitance (Ciss) at different Vds (maximum value) 363pF @ 400V
    Gate charge (Qg) at different Vgs (maximum value) 9nC @ 10V
    Power dissipation (maximum value) 30W(Tc)
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -40°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 600V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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