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Power MOSFET IPD60R600E6ATMA1

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    MPN IPD60R600E6
    Other # IPD60R600E6ATMA1
    Mfr. Infineon
    Oneyac # A-IPD60R600E6
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 200µA
    Gate charge (Qg) at different Vgs (maximum value) 20.5nC
    Input capacitance (Ciss) at different Vds (maximum value) 440pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 100V
    working temperature -55°C~150°C(TJ)
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Number of channels 1Channel
    Continuous drain current Id 7.3A
    Rds On(Max)@Id,Vgs 540mΩ
    Gate voltage Vgs 20V
    to configure Single
    Pd power dissipation (Max) 63W
    height 2.3mm
    length 6.5mm
    Series CoolMOSE6
    FET type N-Channel
    width 6.22mm
    Drain source voltage Vds 600V
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