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Power Mosfet IPD60R600E6ATMA1

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    MPN IPD60R600E6
    Other # IPD60R600E6ATMA1
    Mfr. Infineon
    Oneyac # A-IPD60R600E6
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Configuration Single
    length 6.5mm
    Rds On(Max)@Id,Vgs 540mΩ
    Drain-source voltage Vds 600V
    Continuous Drain Current Id 7.3A
    Vgs (th) (maximum) at different Ids 3.5V @ 200µA
    Number of channels 1Channel
    Series CoolMOSE6
    Input capacitance (Ciss) at different Vds (maximum) 440pF
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 100V
    Gate Charge (Qg) at Different Vgs (Maximum) 20.5nC
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Gate voltage Vgs 20V
    fet type N-Channel
    Operating temperature -55°C~150°C(TJ)
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 10V
    height 2.3mm
    width 6.22mm
    Pd-power dissipation (Max) 63W
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