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Universal MOSFET TO-252-3,Dpak,SC-63 DPAK

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    MPN FCD850N80Z
    Mfr. ON Semiconductor
    Oneyac # A-FCD850N80Z
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3,Dpak,SC-63 Package/Enclosure : DPAK

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Series SuperFET® II
    Continuous drain current Id 6A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4.5V @ 600µA
    Gate charge (Qg) at different Vgs (maximum value) 29nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1315pF @ 100V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 75W(Tc)
    Rds On(Max)@Id,Vgs 850mΩ@3A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-252-3,Dpak,SC-63
    Package/Enclosure DPAK
    FET type N-Channel
    Drain source voltage Vds 800V
    Continuous drain current Id 6A
    Vgs (th) at different IDs (maximum value) 4.5V @ 600µA
    Gate charge (Qg) at different Vgs (maximum value) 29nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1315pF @ 100V
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