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Power MOSFET N channels TO-252-3, DPak (2 leads+tab), SC-63 -55°C ~ 150°C(TJ)

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MPN IPD60R3K3C6ATMA1
Other # IPD60R3K3C6
Mfr. Infineon
Oneyac # A-IPD60R3K3C6ATMA1
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description MOSFET N-CH 600V 1.7A TO252-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Current at 25 ° C - Continuous Drain (Id) 1.7A(Tc)
FET type N channels
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 3.3 ohms @ 500mA, 10V
Vgs (th) (maximum value) for different IDs 3.5V @ 40uA
Input capacitance (Ciss) at different Vds (maximum value) 93pF @ 100V
Gate charge (Qg) at different Vgs (maximum value) 4.6nC @ 10V
Power dissipation (maximum value) 18.1W(Tc)
Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
working temperature -55°C ~ 150°C(TJ)
technology MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 600V
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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