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Power Mosfet BSZ12DN20NS3 G 8-PowerTDFN

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    MPN BSZ12DN20NS3GATMA1
    Other # BSZ12DN20NS3 G
    Mfr. Infineon
    Oneyac # A-BSZ12DN20NS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Current at 25°C-Continuous Drain (Id) 11.3A(Tc)
    Gate charge at different VGS (QG) (maximum) 8.7nC @ 10V
    Drain-Source Voltage (Vdss) 200V
    Vgs(th) (maximum) when different Id 4V @ 25uA
    On resistance at different Id and Vgs (maximum) 125 milliohm @ 5.7a, 10V
    technology MOSFET (metal oxide)
    fet type n channel
    Package/Enclosure 8-PowerTDFN
    Input capacitance (Ciss) (maximum) at different Vds 680pF @ 100V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Power dissipation (maximum) 50W(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Vgs(Max) ±20V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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