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Power MOSFET BSC12DN20NS3GATMA1

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    MPN BSC12DN20NS3 G
    Other # BSC12DN20NS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC12DN20NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 11.3A
    Rds On(Max)@Id,Vgs 108mΩ
    Gate voltage Vgs 20V
    QG gate charge 8.7nC
    to configure Single
    Pd power dissipation (Max) 50W
    height 1.27mm
    length 5.9mm
    Series BSC12DN20
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 6S
    Descent time 3ns
    rise time 4ns
    Typical shutdown delay time 10ns
    Typical connection delay time 6ns
    working temperature -55°C~150°C
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