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Power Mosfet BSZ130N03LS G 8-PowerTDFN

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    MPN BSZ130N03LSGATMA1
    Other # BSZ130N03LS G
    Mfr. Infineon
    Oneyac # A-BSZ130N03LSGATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) (maximum) at different Vds 970pF @ 15V
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    Current at 25°C-Continuous Drain (Id) 10A(Ta),35A(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Vgs(th) (maximum) when different Id 2.2V @ 250uA
    fet type n channel
    Power dissipation (maximum) 2.1W(Ta),25W(Tc)
    Package/Enclosure 8-PowerTDFN
    Gate charge at different VGS (QG) (maximum) 13nC @ 10V
    On resistance at different Id and Vgs (maximum) 13 milliohm @ 20a, 10V
    Drain-Source Voltage (Vdss) 30V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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