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Power Mosfet BSZ160N10NS3 G 8-PowerTDFN

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    MPN BSZ160N10NS3GATMA1
    Other # BSZ160N10NS3 G
    Mfr. Infineon
    Oneyac # A-BSZ160N10NS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    fet type n channel
    On resistance at different Id and Vgs (maximum) 16 milliohms @ 20A, 10V
    Current at 25°C-Continuous Drain (Id) 8A(Ta),40A(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 1700pF @ 50V
    technology MOSFET (metal oxide)
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 2.1W(Ta),63W(Tc)
    Vgs(Max) ±20V
    Drain-Source Voltage (Vdss) 100V
    Vgs(th) (maximum) when different Id 3.5V @ 12uA
    Gate charge at different VGS (QG) (maximum) 25nC @ 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    Package/Enclosure 8-PowerTDFN
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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