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Power MOSFET BSZ100N06LS3 G 8-PowerVDFN

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    MPN BSZ100N06LS3GATMA1
    Other # BSZ100N06LS3 G
    Mfr. Infineon
    Oneyac # A-BSZ100N06LS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerVDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 11A(Ta),20A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 10 milliohms @ 20A, 10V
    Vgs (th) (maximum value) for different IDs 2.2V @ 23uA
    Input capacitance (Ciss) at different Vds (maximum value) 3500pF @ 30V
    Gate charge (Qg) at different Vgs (maximum value) 45nC @ 10V
    Power dissipation (maximum value) 2.1W(Ta),50W(Tc)
    Package/Enclosure 8-PowerVDFN
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 60V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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