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Power MOSFET 6 A Tube N-Channel 850 m0hms 800 V 20V 4.5 V 800V 6A(Tc) ±20V 28.4W(Tc) 850mΩ@3A,10V -55°C~150°C(TJ) TO-220-3

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MPN FCPF850N80Z
Mfr. ON Semiconductor
Oneyac # A-FCPF850N80Z
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description 6 A Tube N-Channel 850 m0hms 800 V 20V 4.5 V 800V 6A(Tc) ±20V 28.4W(Tc) 850mΩ@3A,10V -55°C~150°C(TJ) TO-220-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Ciss - Input capacitor 990 pF
Continuous drain current Id 6 A
Package/Enclosure Tube
FET type N-Channel
Minimum operating temperature - 55 C
Maximum operating temperature + 150 C
Standard disconnect delay time 40 ns
Pd - Power consumption 28.4 W
to configure Single
Qg - Gate Charging 22 nC
Rds On(Max)@Id,Vgs 850 m0hms
Drain source voltage Vds 800 V
Gate voltage Vgs 20V
Gate voltage Vgs 4.5 V
rise time 10 ns
Descent time 4.5 ns
Drain source voltage Vds 800V
Continuous drain current Id 6A(Tc)
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 4.5V @ 600µA
Gate charge (Qg) at different Vgs (maximum value) 29nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1315pF @ 100V
Pd power dissipation (Max) 28.4W(Tc)
Rds On(Max)@Id,Vgs 850mΩ@3A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure TO-220-3
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