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Power MOSFET TO-220-3

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    MPN FCPF125N65S3
    Mfr. ON Semiconductor
    Oneyac # A-FCPF125N65S3
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 650V
    Continuous drain current Id 24A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4.5V @ 2.4mA
    Gate charge (Qg) at different Vgs (maximum value) 44nC @ 10V
    Gate voltage Vgs ±30V
    Input capacitance (Ciss) at different Vds (maximum value) 1790pF @ 400V
    Pd power dissipation (Max) 38W(Tc)
    Rds On(Max)@Id,Vgs 125mΩ@12A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-220-3
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