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Power MOSFET TO-252-3,Dpak,SC-63

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    MPN FCD900N60Z
    Mfr. ON Semiconductor
    Oneyac # A-FCD900N60Z
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3,Dpak,SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 600V
    Continuous drain current Id 4.5A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 17nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 720pF @ 25V
    Pd power dissipation (Max) 52W(Tc)
    Rds On(Max)@Id,Vgs 900mΩ@2.3A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-252-3,Dpak,SC-63
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