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Power Mosfet 

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    MPN IRLML2060TRPBF
    Mfr. Infineon
    Oneyac # A-IRLML2060TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 60 V 1.25 W 0.67 nC Hexfet Power Mosfet Surface Mount - MICRO-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs (th) at different IDs (maximum value) 2.5V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) .67nC @ 4.5V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 64pF @ 25V
    Pd power dissipation (Max) 1.25W(Ta)
    working temperature -55°C~150°C(TJ)
    series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 0.67nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 64pF @ 25V
    Rds On(Max)@Id,Vgs 480mΩ@1.2A,10V
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 1.2A
    Encapsulation/shell Micro3™/SOT-23
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