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Power MOSFET SOIC-8

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    MPN FDS6681Z
    Mfr. ON Semiconductor
    Oneyac # A-FDS6681Z
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Gate voltage Vgs ±25V
    Pd power dissipation (Max) 2.5W(Ta)
    Rds On(Max)@Id,Vgs 4.6mΩ@-20A,-10V
    FET type P-Channel
    Continuous drain current Id -20A
    Drain source voltage Vds -30V
    Package/Enclosure SOIC-8
    working temperature -55°C~150°C
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    In Stock :  0 Lead Time:8-10W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 2,500 ETD HK Contact Us
    Min. 1 Mult. 1

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