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Small signal MOSFET SOIC 5.0*3.99*1.5mm

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    MPN FDS6982AS
    Mfr. ON Semiconductor
    Oneyac # A-FDS6982AS
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET

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    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Series FDS
    height 1.75 mm
    length 4.9 mm
    width 3.9 mm
    Part number alias FDS6982AS_NL
    to configure Dual Dual Drain
    Descent time 3 ns
    Typical connection delay time 10 ns
    rise time 7 ns
    Gate voltage Vgs 20V
    Number of channels 2 Channel
    Typical shutdown delay time 24 ns
    Forward transconductance - minimum value 32 S, 19 S
    Rds On(Max)@Id,Vgs 28mΩ@6.3A,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 610pF @ 10V
    Pd power dissipation (Max) 900mW
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 6.3A,8.6A
    Continuous drain current Id 6.3 A,8.6 A
    Drain source voltage Vds 30 V
    Rds On(Max)@Id,Vgs 14 m0hms,28 m0hms
    Minimum gate threshold voltage 1V
    Gate voltage Vgs -20 V、+20 V
    Transistor configuration Isolation type
    pin number 8
    FET type enhance
    category Power MOSFET
    Power Rating 2W
    Typical connection delay time 12 ns
    Typical shutdown delay time 24 ns, 27 ns
    Drain source voltage Vds 1250 pF@ 10 V, 610 pF@ 10 V
    Transistor material Si
    Series PowerTrench, SyncFET
    width 3.99mm
    Minimum operating temperature -55 °C
    Maximum operating temperature +150 °C
    length 5mm
    height 1.50mm
    Package/Enclosure 5.0*3.99*1.5mm
    Number of components per chip 2
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    In Stock :  0 Lead Time:8-10W

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