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Small signal MOSFET SC-70 SOT-363 (SC-70) 2.0*1.25*1.0mm

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    MPN FDG6316P
    Mfr. ON Semiconductor
    Oneyac # A-FDG6316P
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET

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    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Series FDG
    height 1.1 mm
    length 2 mm
    width 1.25 mm
    Part number alias FDG6316P_NL
    to configure Dual
    Typical connection delay time 5 ns
    rise time 13 ns
    Gate voltage Vgs 8V
    Number of channels 2 Channel
    Typical shutdown delay time 8 ns
    Forward transconductance - minimum value 2.5 S
    Rds On(Max)@Id,Vgs 270mΩ@700mA,4.5V
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 2.4nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 146pF @ 6V
    Pd power dissipation (Max) 300mW
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SC-70
    FET type P-Channel
    Drain source voltage Vds 12V
    Continuous drain current Id 0.7A
    Continuous drain current Id 700 mA
    Drain source voltage Vds 12 V
    Rds On(Max)@Id,Vgs 650 m0hms
    Minimum gate threshold voltage 0.4V
    Gate voltage Vgs -8 V、+8 V
    Package/Enclosure SOT-363 (SC-70)
    Transistor configuration Isolation type
    pin number 6
    FET type enhance
    category Power MOSFET
    Power Rating 3/10W
    length 2.00mm
    Package/Enclosure 2.0*1.25*1.0mm
    Number of components per chip 2
    Series PowerTrench
    Transistor material Si
    Drain source voltage Vds 146 pF @ -6 V
    Typical shutdown delay time 8 ns
    width 1.25mm
    Minimum operating temperature -55 °C
    height 1mm
    Maximum operating temperature +150 °C
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