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Power MOSFET SOT-223 6.7*3.7*1.7mm

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    MPN IRFM120ATF
    Mfr. ON Semiconductor
    Oneyac # A-IRFM120ATF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series IRFM
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 22nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 480pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2.4W(Ta)
    Rds On(Max)@Id,Vgs 200mΩ@1.15A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-223
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 2.3A
    Continuous drain current Id 2.3 A
    Drain source voltage Vds 100 V
    Rds On(Max)@Id,Vgs 200 m0hms
    Minimum gate threshold voltage 2V
    Gate voltage Vgs -20 V、+20 V
    Transistor configuration single
    pin number 3+Tab
    FET type enhance
    category Power MOSFET
    Power Rating 2.4W
    height 1.7mm
    Package/Enclosure 6.7*3.7*1.7mm
    width 3.7mm
    Minimum operating temperature -55 °C
    Transistor material Si
    Drain source voltage Vds 370 pF @ 25 V
    Typical shutdown delay time 36 ns
    Typical connection delay time 14 ns
    length 6.7mm
    Maximum operating temperature +150 °C
    Number of components per chip 1 Ohms
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