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Power MOSFET TO-220AB

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    MPN IRFB4410ZPBF
    Mfr. Infineon
    Oneyac # A36-IRFB4410ZPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 100 V 9 mO 83 nC Flange Mount Hexfet Power Mosfet - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 4820pF @ 50V
    Pd power dissipation (Max) 230W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4820pF @ 50V
    Rds On(Max)@Id,Vgs 9mΩ@58A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 97A
    Package/Enclosure TO-220AB
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    In Stock :  806

    Qty. Unit Price Ext. Price
    20+ $0.4883 $9.766
    100+ $0.391 $39.1

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: Within 2 years

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