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Gate Drive SOIC 8N

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    MPN IR2011STRPBF
    Mfr. Infineon
    Oneyac # A36-IR2011STRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    IR2011S Series Dual 20 V Surface Mount High and Low Side Driver - SOIC-8N

    Specifications FAQ

    Description Details Operation
    Product Category Gate Drive
    Package/Enclosure SOIC 8N
    Drive configuration Half bridge
    fet type Detached
    Number of drives 2
    Gate type N-Channel Mosfet
    Voltage-Power 10 V ~ 20 V
    Logic Voltage-VIL, VIH 0.7V,2.2V
    Current-peak output (sink, pull out) 1A,1A
    Input type Reverse
    High-SideVoltage-Max(Bootstrap) 200V
    Rise / fall time (typical) 35ns,20ns
    Operating temperature -40°C ~ 150°C(TJ)
    Voltage-power 10 V ~ 20 V
    Logic voltage-VIL, VIH 0.7V,2.2V
    Current-peak output (sink, pull out) 1A,1A
    High-Side Voltage-Maximum (Bootstrap) 200V
    Exciter number 2Driver
    Output current 1A
    Rise Time 50ns
    Fall time 35ns
    Supply voltage-maximum 20V
    Power supply voltage-minimum 10V
    Propagation Delay-Maximum 80ns
    Features Independent
    height 1.50mm
    length 5mm
    Number of outputs 2Output
    width 4mm
    Logical type CMOS,TTL
    Maximum off delay time 75ns
    Maximum turn-on delay time 80ns
    Working power current (mA) 230uA
    Power Rating 5/8W
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    In Stock :  31

    Qty. Unit Price Ext. Price
    8+ $0.9086 $7.2688

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 8 Mult. 1

    Special Note

    Production Date: 22+