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Power MOSFET 8-SO

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    MPN IRF7493TRPBF
    Mfr. Infineon
    Oneyac # A36-IRF7493TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 80 V 15 mOhm 53 nC 2.5 W Silicon SMT Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 53nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1510pF @ 25V
    Pd power dissipation (Max) 2.5W(Tc)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 53nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1510pF @ 25V
    Rds On(Max)@Id,Vgs 15mΩ@5.6A,10V
    FET type N-Channel
    Drain source voltage Vds 80V
    Continuous drain current Id 9.3A
    Package/Enclosure 8-SO
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    In Stock :  100

    Qty. Unit Price Ext. Price
    20+ $0.6617 $13.234
    100+ $0.5522 $55.22

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 23+

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