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Power MOSFET TO-220AB

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    MPN IRF8010PBF
    Mfr. Infineon
    Oneyac # A33-IRF8010PBF-0
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Flange Mount - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 3830pF @ 25V
    Pd power dissipation (Max) 260W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3830pF @ 25V
    Rds On(Max)@Id,Vgs 15mΩ@45A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 80A
    Package/Enclosure TO-220AB
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    In Stock :  970

    Qty. Unit Price Ext. Price
    20+ $1.3516 $27.032
    50+ $1.3118 $65.59
    100+ $1.2721 $127.21
    500+ $1.2456 $622.8

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2023

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