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Power MOSFET SOIC-8

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    MPN SI4401DDY-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI4401DDY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 95nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3007pF @ 20V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    Continuous drain current Id 16.1A
    Pd power dissipation (Max) 6.3W
    QG gate charge 64nC
    Rds On(Max)@Id,Vgs 15mΩ
    Drain source voltage Vds 40V
    Gate voltage Vgs 1.2V
    rise time 11ns
    Descent time 9ns
    Typical shutdown delay time 45ns
    Typical connection delay time 13ns
    Forward transconductance - minimum value 37S
    Series SI4
    Number of channels 1Channel
    to configure Single
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    In Stock :  0 Lead Time:18W

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    MPQ 2,500 ETD HK Contact Us
    Min. 1 Mult. 1

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